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| UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V *Collector current up to 300mA *Complement to MPSA94 *Collector Dissipation: Pc(max)=625mW 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR *Pb-free plating product number: MPSA44BL ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector dissipation(Ta=25) Pc Collector dissipation(Tc=25) Pc Collector current Ic Junction Temperature Tj Storage Temperature Tstg RATINGS 500 400 6 625 1.5 300 150 -55 ~ +150 UNIT V V V mW W mA ELECTRICAL CHARACTERISTICS (Tj=25,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain(note) SYMBOL BVCBO BVCEO BVEBO ICBO ICES IEBO hFE TEST CONDITIONS Ic=100A, IB=0 Ic=1mA, IB=0 IE=100A, Ic=0 VCB=400V,IE=0 VCE=400V,IB=0 VEB=4V,Ic=0 VCE=10V, Ic=1mA VCE=10V, Ic=10mA VCE=10V, Ic=50mA VCE=10V, Ic=100mA Ic=1mA, IB=0.1mA Ic=10mA, IB=1mA Ic=50mA, IB=5mA Ic=10mA, IB=1mA VCE=20V, Ic=10mA, f=100MHz VCB=20V, IE=0, f=1MHz MIN 500 400 6 TYP MAX UNIT V V V A A A 0.1 0.5 0.1 40 50 45 40 240 Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance VCE(sat) VBE(sat) fT Cob 0.4 0.5 0.75 0.75 50 7 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-079,B www.unisonic.com.tw UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR Note: Pulse test:PW<300s,Duty Cycle<2% TYPICAL CHARACTERISTIC CURVES Fig.1 DC current gain DC current current gain, HFE 1 10 140 120 100 80 60 40 20 0 -20 -40 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 10 Fig.2 Turn-on switching times VCE=150V Ic/IB=10 Ta=25 VBE(OFF)=4V 2 10 Fig.3 Turn-off switching times VCE=150V Ic/IB=10 Ta=25 Ts Time (s) 0 10 Time (s) VCE=10V 1 10 0 10 Tf Td 2 10 Tf -1 10 0 10 1 10 2 10 Collector current, Ic (mA) Collector current, Ic (mA) Collector current, Ic (mA) Fig.4 Capacitance 3 10 1.0 Fig.5 ON Voltage Collector-Emitter voltage (V) Ta=25 VBE(sat),Ic/IB=10 0.5 Fig.6 Collector saturation region 0.8 0.4 Capacitance (pF) Ic=1mA Ic=10mA Ic=50mA voltage (V) 2 10 Cib 0.6 0.3 VBE(ON),VCE=10V 0.4 0.2 1 10 Cob 0.2 VCE(sat),Ic/IB=10 0.1 0 10 -1 10 Ta=25 0 1 10 2 10 3 10 4 10 5 10 0 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 10 Collector voltage(V) Collector current,Ic (mA) base current, Ib (A) Fig.7 High Frequency current gain Small signal current gain, HFE 2 10 Fig.8 Safe operating area 4 10 Collector current, Ic (mA) VCE=10V f=10MHz Ta=25 Valid Duty Cycle<10% 1ms 1s =2 Tc 3 10 1 10 0.1ms 5 2 10 =2 Ta 5 0 10 1 10 -1 10 -1 10 0 10 1 10 2 10 3 10 0 10 MPSA44B 0 10 1 10 2 10 3 10 4 10 Collector current, Ic (mA) Collector voltage (V) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-079,B www.unisonic.com.tw UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-079,B www.unisonic.com.tw UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR UT C assum es no responsibility for equipm ent failures that result from using products at v alues that exceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all U TC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R201-079,B www.unisonic.com.tw |
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